Cellulose is the most abundant biomass on Earth (approximately 100 billion tons per year) and is currently one of the most promising materials for achieving carbon neutrality and combating global warming and climate change.
A research group led by Mikio Fukuhara (NICHe Senior research fellow), Toshiyuki Hashida (Specially Appointed Professor), Takahito Ono (Graduate School of Engineering) and Nobuhisa Fujima (Faculty of Engineering, Shizuoka University) has created an n-type bio-semiconductor MESFET using a Schottky junction with Amorphous Kenaf Cellulose Nano-Particle, achieving a 3.5-digit amplification effect with a negative gate voltage and a high on/off ratio of 6173 for the non-volatile memory effect with a positive gate voltage on/off ratio under positive gate voltage. Additionally, they clarified through electron spin resonance measurements that the conducting electrons are induced radicals of oxygen O atoms in the glycosidic bonds of cellulose molecules.
The results were published in AIP-Advances on July 29, 2025 and selected Editor’s pick.
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