In order to achieve carbon neutrality, energy-saving power devices that convert electric power for home appliances, electric vehicles, industrial machinery, renewable energy, etc. β-Ga2O3 has a wider band gap than silicon carbide (SiC) and gallium nitride (GaN), and is expected to be a power device with higher performance and lower energy loss. It is expected to be a power device with high performance and low energy loss. In addition, β-Ga2O3, like silicon (Si), can be grown in melt, making it theoretically possible to fabricate single-crystal substrates (wafers) at low cost and with low defects. However, the conventional crystal growth method uses iridium (Ir: approx. 26,000 yen/g @ August 2024 market price), a precious metal, in the crucible that holds the high-melting-point oxide melt, and periodic recasting is also necessary, so the Ir-derived cost accounts for more than 60% of the cost, including thin film production as part of the semiconductor front-end process, and the β It has been very difficult to reduce the production cost of β-Ga2O3 devices. Currently, β-Ga2O3 substrates are more expensive than SiC substrates, which represent the next generation of power semiconductors, and β-Ga2O3 is not widely used.
To solve this problem, we have started a Tohoku University start-up company, FOX Co. With investments from Macnica Investment Partners, Iwatani Venture Capital, and Tohoku Tech Ventures, LLC, as well as support from the NEDO DTSU project, we expect to establish a low-cost, low-defect large-diameter wafer manufacturing technology for β-Ga2O3 and mass-produce it, thereby promoting the social implementation of β-Ga2O3 power devices This is expected to promote the implementation of β-Ga2O3 power devices in society and make a significant contribution to the realization of a decarbonized society.
Related materials
Tohoku University press release page (Japanese) (click here)
The Institute for Materials Research’s press release page (English) (click here)